ic integrated circuit Transistors Array 30V 6A, 4.3A 2.78W Surface Mount 8-SOIC SI4532CDY-T1-GE3
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(415 reviews)35 sold
Attributes
MOSFET Type
MOSFETApplication
Surface MountPackage Type
Surface MountMounting Type
StandardFET Feature
Not ApplicableConfiguration
Media Available:Datasheet
Supplier Type:Retailer, ODM, Other
Power - Max:2.78W
Package / Case:8-SOIC
Description:30V 6A, 4.3A 2.78W Surface Mount 8-SOIC
Manufacturer Part Number:SI4532CDY-T1-GE3
Brand Name:New
Place of Origin:Guangdong, China
Operating Temperature:-55°C ~ 150°C (TJ)
Series:MOSFET
Mfg Date Code:New
Voltage - Collector Emitter Breakdown (max):30V
Vce Saturation (Max) @ Ib, Ic:47mOhm @ 3.5A, 10V
Current - Collector Cutoff (Max):2.78W
DC Current Gain (hFE) (Min) @ Ic, Vce:47mOhm @ 3.5A, 10V
Frequency - Transition:NA
Resistor - Base (R1):na
Resistor - Emitter Base (R2):na
FET Type:MOSFET
Drain to Source Voltage (Vdss):305pF @ 15V
Current - Continuous Drain (Id) @ 25°C:3V @ 250uA
Rds On (Max) @ Id, Vgs:47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:47mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:47mOhm @ 3.5A, 10V
Frequency:47mOhm @ 3.5A, 10V
Current Rating (Amps):2.78W
Noise Figure:NA
Power - Output:47mOhm @ 3.5A, 10V
Voltage - Rated:N and P-Channel
Drive Voltage (Max Rds On, Min Rds On):NA
Vgs (Max):47mOhm @ 3.5A, 10V
IGBT Type:N and P-Channel
Vce(on) (Max) @ Vge, Ic:NA
Input Capacitance (Cies) @ Vce:NA
Input:NA
NTC Thermistor:NA
Voltage - Breakdown (V(BR)GSS):NA
Current Drain (Id) - Max:NA
Voltage - Cutoff (VGS off) @ Id:NA
Resistance - RDS(On):NA
Voltage - Output:NA
Voltage - Offset (Vt):NA
Current - Gate to Anode Leakage (Igao):NA
Current - Valley (Iv):NA
Current - Peak:NA
Key attributes
Type
MOSFET
Application
MOSFET
Package Type
Surface Mount
Mounting Type
Surface Mount
FET Feature
Standard
Configuration
Not Applicable
Media Available
Datasheet
Supplier Type
Retailer, ODM, Other
Power - Max
2.78W
Package / Case
8-SOIC
Description
30V 6A, 4.3A 2.78W Surface Mount 8-SOIC
Manufacturer Part Number
SI4532CDY-T1-GE3
Brand Name
New
Place of Origin
Guangdong, China
Operating Temperature
-55°C ~ 150°C (TJ)
Series
MOSFET
Mfg Date Code
New
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (Max) @ Ib, Ic
47mOhm @ 3.5A, 10V
Current - Collector Cutoff (Max)
2.78W
DC Current Gain (hFE) (Min) @ Ic, Vce
47mOhm @ 3.5A, 10V
Frequency - Transition
NA
Resistor - Base (R1)
na
Resistor - Emitter Base (R2)
na
FET Type
MOSFET
Drain to Source Voltage (Vdss)
305pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3V @ 250uA
Rds On (Max) @ Id, Vgs
47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
47mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
47mOhm @ 3.5A, 10V
Frequency
47mOhm @ 3.5A, 10V
Current Rating (Amps)
2.78W
Noise Figure
NA
Power - Output
47mOhm @ 3.5A, 10V
Voltage - Rated
N and P-Channel
Drive Voltage (Max Rds On, Min Rds On)
NA
Vgs (Max)
47mOhm @ 3.5A, 10V
IGBT Type
N and P-Channel
Vce(on) (Max) @ Vge, Ic
NA
Input Capacitance (Cies) @ Vce
NA
Input
NA
NTC Thermistor
NA
Voltage - Breakdown (V(BR)GSS)
NA
Current Drain (Id) - Max
NA
Voltage - Cutoff (VGS off) @ Id
NA
Resistance - RDS(On)
NA
Voltage - Output
NA
Voltage - Offset (Vt)
NA
Current - Gate to Anode Leakage (Igao)
NA
Current - Valley (Iv)
NA
Current - Peak
NA
Mounting Type
Surface Mount
Packaging and delivery
Selling Units
Single item
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
Minimum order quantity: 1 piece
$0.08-0.50Variations
Select now规格
SI4532CDY-T1-GE3
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