Attributes
NullModel Number
MOSFET Type
Throught HolePackage Type
NullDescription
Jiangsu, ChinaPlace of Origin
NullPackage / Case
Operating Temperature:Null
Series:Null
D/C:Null
Application:Amplifier
Supplier Type:Retailer, ODM, Original Manufacturer, Agency
Cross Reference:Null
Media Available:Photo, EDA/CAD Models, Datasheet
Current - Collector (Ic) (Max):Null
Voltage - Collector Emitter Breakdown (max):Null
Vce Saturation (Max) @ Ib, Ic:Null
Current - Collector Cutoff (Max):Null
DC Current Gain (hFE) (Min) @ Ic, Vce:Null
Power - Max:Null
Frequency - Transition:Null
Mounting Type:Through Hole
Resistor - Base (R1):Null
Resistor - Emitter Base (R2):Null
FET Type:Null
FET Feature:Standard
Drain to Source Voltage (Vdss):Null
Current - Continuous Drain (Id) @ 25°C:Null
Rds On (Max) @ Id, Vgs:Null
Vgs(th) (Max) @ Id:Null
Gate Charge (Qg) (Max) @ Vgs:Null
Input Capacitance (Ciss) (Max) @ Vds:Null
Frequency:Null
Current Rating (Amps):Null
Noise Figure:Null
Power - Output:Null
Voltage - Rated:Null
Drive Voltage (Max Rds On, Min Rds On):Null
Vgs (Max):Null
IGBT Type:Null
Configuration:Three Level Inverter - IGBT, FET
Vce(on) (Max) @ Vge, Ic:Null
Input Capacitance (Cies) @ Vce:Null
Input:Null
NTC Thermistor:Null
Voltage - Breakdown (V(BR)GSS):Null
Current - Drain (Idss) @ Vds (Vgs=0):Null
Current Drain (Id) - Max:Null
Voltage - Cutoff (VGS off) @ Id:Null
Resistance - RDS(On):Null
Voltage - Output:Null
Voltage - Offset (Vt):Null
Current - Gate to Anode Leakage (Igao):Null
Current - Valley (Iv):Null
Current - Peak:Null
Transistor Type:mosfet
Mounting Type:Null
Type:Bipolar Junction Transistor
Product Name:YAREN 50N60 50A 600V
Application::Standard
Channel:N-Channel
Usage:Electronic Components
Condition::New & Unused, Original sealed
QUALITY WARRANTY::365 DAYS
Package:TO-247
brand:Yaren
Place of Origin::Jiangsu, China (Mainland)
Selling Units:Multiple of 1,000
Package size per batch:52X15X15 cm
Gross weight per batch:10.200 kg
