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Transistors NXH004P120M3F2PTHG Module Electronic Circuit Components Original

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$0.77
100-3,099 pieces
$0.39
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

NXH004P120M3F2PTHG

Brand Name

Original

Description

MOSFET 2N-CH 1200V 284A 36PIM

Place of Origin

China

Package / Case

Module

Operating Temperature

-40°C ~ 175°C (TJ)

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$0.00
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$0.00

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Key attributes

Manufacturer Part Number
NXH004P120M3F2PTHG
Brand Name
Original
Description
MOSFET 2N-CH 1200V 284A 36PIM
Place of Origin
China
Package / Case
Module
Operating Temperature
-40°C ~ 175°C (TJ)
Series
-
Mfg Date Code
NEW
Power - Max
785W (Tc)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
284A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id
4.4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs
876nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
16410pF @ 800V
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Package
Tray
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning