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Power Mosfet 100V 180A Transistor TO-220 N-channel DTP18100 Irfb4110

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$0.50
Minimum order quantity: 1 piece
Specification

Key attributes

Manufacturer Part Number

DTP18100

Type

MOSFET

Package Type

-

Place of Origin

Other

Mfg Date Code

Newest

Application

-

Shipping
Select shipping

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Key attributes

Manufacturer Part Number
DTP18100
Type
MOSFET 
Package Type
-
Place of Origin
Original
Mfg Date Code
Newest
Application
-
Voltage - Collector Emitter Breakdown (max)
-
Vce Saturation (Max) @ Ib, Ic
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
IGBT Type
-
Configuration
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Mounting Type
Through Hole
Payment
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Lead time
1-3 Working Days
Datasheet
Contact Manager
RDS(ON) (mΩ) at VGS=10V
3.6
VGS ±(V)
20
VDS (V)
100
VGS(th)(V)
3
ID (A)
180

Packaging and delivery

Selling Units
Single item

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning