Original Electronics Component EM004LXQBDH13ES2R 8 VDFN Exposed Pad Memory
Store rating:4.6
(3 reviews)
Attributes
MRAM (Magnetoresistive RAM)Technology
Non-VolatileMemory Type
512K x 8Memory Organization
Component & PartType
4MbitMemory Size
ChinaPlace of Origin
Packaging Type:Tape & Reel (TR)
Application:Memory
Features:Electronic Components Integrated Circuit
Voltage - Supply:1.65V ~ 2V
Clock Frequency:133 MHz
Write Cycle Time - Word, Page:-
Memory Interface:SPI - Quad I/O
Key attributes
Technology
MRAM (Magnetoresistive RAM)
Memory Type
Non-Volatile
Memory Organization
512K x 8
Type
Component & Part
Memory Size
4Mbit
Place of Origin
China
Packaging Type
Tape & Reel (TR)
Application
Memory
Features
Electronic Components Integrated Circuit
Voltage - Supply
1.65V ~ 2V
Clock Frequency
133 MHz
Write Cycle Time - Word, Page
-
Memory Interface
SPI - Quad I/O
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
2,000 - 4,999 pieces
$640
>= 5,000 pieces
$320
Variations
Select nowSpecification
EM004LXQBDH13ES2R
Shipping
Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
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