Attributes
IRF640NPBFModel Number
TRANSISTORType
Throught HolePackage Type
MOSFET N-CH 200V 18A TO220ABDescription
taiwanPlace of Origin
TO-220-3Package / Case
Operating Temperature:-55°C ~ 175°C (TJ)
Series:IRF640NPBF
D/C:10V
Application:Industrial
Supplier Type:Agency
Media Available:Datasheet
Current - Collector (Ic) (Max):35A
Voltage - Collector Emitter Breakdown (max):35 nC @ 15 V
Vce Saturation (Max) @ Ib, Ic:78mOhm @ 20A, 15V
Current - Collector Cutoff (Max):35A (Tc)
DC Current Gain (hFE) (Min) @ Ic, Vce:3.5V @ 5mA
Power - Max:113.5 W
Frequency - Transition:5011 pF
Mounting Type:Through Hole
FET Type:MOSFETs
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):IRF640NPBF
Current - Continuous Drain (Id) @ 25°C:IRF640NPBF
Rds On (Max) @ Id, Vgs:IIRF640NPBF
Vgs(th) (Max) @ Id:IRF640NPBF
Gate Charge (Qg) (Max) @ Vgs:IRF640NPBF
Input Capacitance (Ciss) (Max) @ Vds:IRF640NPBF
Frequency:IRF640NPBF
Current Rating (Amps):IRF640NPBF
Noise Figure:IRF640NPBF
Power - Output:IRF640NPBF
Voltage - Rated:IRF640NPBF
Drive Voltage (Max Rds On, Min Rds On):IRF640NPBF
Vgs (Max):IRF640NPBF
IGBT Type:IRF640NPBF
Configuration:Single
Vce(on) (Max) @ Vge, Ic:IRF640NPBF
Input Capacitance (Cies) @ Vce:IRF640NPBF
Input:IRF640NPBF
NTC Thermistor:IRF640NPBF
Voltage - Breakdown (V(BR)GSS):IRF640NPBF
Current - Drain (Idss) @ Vds (Vgs=0):IRF640NPBF
Current Drain (Id) - Max:IRF640NPBF
Voltage - Cutoff (VGS off) @ Id:IRF640NPBF
Resistance - RDS(On):IRF640NPBF
Voltage - Output:IRF640NPBF
Voltage - Offset (Vt):IRF640NPBF
Current - Gate to Anode Leakage (Igao):IRF640NPBF
Current - Valley (Iv):IRF640NPBF
Current - Peak:IRF640NPBF
Transistor Type:SiC MOSFETs
Mounting Type:Through Hole
Type:Field-Effect Transistor
Package / Case:TO-220-3
Series:STripFE
D/C:Newest
Payment:Paypal\TT\Western Union\Trade Assurance
Package:Reel
Configuration:Single
Product Name:Transistor IC Electronic Component
Shipping BY:DHL\UPS\Fedex\EMS\HK Post
Service:Bom List
Selling Units:Single item
Single package size:24X18X16 cm
Single gross weight:1.000 kg
