New Original FMV19N60E Single N-Channel Power MOSFET Transistor TO-3P Package 19N60E single configuration MOSFET
Store rating:4.9
(34 reviews)
Attributes
19N60EManufacturer Part Number
MOSFET Type
OrigianlBrand Name
Throught HolePackage Type
Power MOSFET N-Channel FMV19N60E TransistorsDescription
TAIWANPlace of Origin
Package / Case:TO3P
Operating Temperature:-55-150C
Series:TRANSISTORS
Mfg Date Code:Standard
Application:General Purpose
Supplier Type:Original Manufacturer
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (max):- 30 V + 30 V
Vce Saturation (Max) @ Ib, Ic:STANDARD
Current - Collector Cutoff (Max):8A
Power - Max:225 W
Frequency - Transition:Enhancement
Mounting Type:Through Hole
Resistor - Base (R1):Enhancement
Resistor - Emitter Base (R2):1.45 Ohms
FET Feature:Schottky Diode (Isolated)
Drain to Source Voltage (Vdss):3V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:70 nC
Vgs(th) (Max) @ Id:Standard
Gate Charge (Qg) (Max) @ Vgs:Standard
Input Capacitance (Ciss) (Max) @ Vds:Standard
Frequency:Standard
Current Rating (Amps):Standard
Noise Figure:Standard
Power - Output:225w
Voltage - Rated:3v
Drive Voltage (Max Rds On, Min Rds On):Standard
Vgs (Max):Standard
IGBT Type:Mosfet
Configuration:Single
Vce(on) (Max) @ Vge, Ic:Standard
Input Capacitance (Cies) @ Vce:Standard
Input:Standard
NTC Thermistor:Standard
Voltage - Breakdown (V(BR)GSS):Standard
Current - Drain (Idss) @ Vds (Vgs=0):Standard
Current Drain (Id) - Max:Standard
Voltage - Cutoff (VGS off) @ Id:Standard
Resistance - RDS(On):Standard
Voltage - Output:Standard
Voltage - Offset (Vt):Standard
Current - Gate to Anode Leakage (Igao):Standard
Current - Valley (Iv):Standard
Current - Peak:Standard
Transistor Type:Mosfet
Key attributes
Manufacturer Part Number
19N60E
Type
MOSFET
Brand Name
Origianl
Package Type
Throught Hole
Description
Power MOSFET N-Channel FMV19N60E Transistors
Place of Origin
TAIWAN
Package / Case
TO3P
Operating Temperature
-55-150C
Series
TRANSISTORS
Mfg Date Code
Standard
Application
General Purpose
Supplier Type
Original Manufacturer
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (max)
- 30 V + 30 V
Vce Saturation (Max) @ Ib, Ic
STANDARD
Current - Collector Cutoff (Max)
8A
Power - Max
225 W
Frequency - Transition
Enhancement
Mounting Type
Through Hole
Resistor - Base (R1)
Enhancement
Resistor - Emitter Base (R2)
1.45 Ohms
FET Feature
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss)
3V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
70 nC
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Frequency
Standard
Current Rating (Amps)
Standard
Noise Figure
Standard
Power - Output
225w
Voltage - Rated
3v
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vgs (Max)
Standard
IGBT Type
Mosfet
Configuration
Single
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Input
Standard
NTC Thermistor
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Output
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Current - Peak
Standard
Transistor Type
Mosfet
Mounting Type
PCB
Packaging and delivery
Selling Units
Single item
Single package size
19X10X5 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
FREE shipping capped at $20
Easy Return
Lower priced than similar
5 - 49 pieces
$2
50 - 499 pieces
$160
>= 500 pieces
$125
*Taxes and import charges will be calculated at checkout
Quantity
Shipping
Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00
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