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NXV08A170DB2 12-PowerDIP Module Transistors Components Electronic In Stock

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$13.96
100-3,099 pieces
$6.98
≥3,100 pieces

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Key attributes

Manufacturer Part Number

NXV08A170DB2

Brand Name

Original

Description

MOSFET 2N-CH 80V 200A APM12-CBA

Place of Origin

China

Package / Case

12-PowerDIP Module (1.118", 28.40mm)

Operating Temperature

175°C (TJ)

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$0.00
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
NXV08A170DB2
Brand Name
Original
Description
MOSFET 2N-CH 80V 200A APM12-CBA
Place of Origin
China
Package / Case
12-PowerDIP Module (1.118", 28.40mm)
Operating Temperature
175°C (TJ)
Series
-
Mfg Date Code
NEW
Power - Max
-
FET Feature
-
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 40V
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Through Hole
Package
Tray
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning