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NXH015F120M3F1PTG Module Transistors Electronics Component Manufacturer Channel

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$0.77
100-3,099 pieces
$0.39
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

NXH015F120M3F1PTG

Brand Name

Original

Description

SILICON CARBIDE (SIC) MODULE ELI

Place of Origin

China

Package / Case

Module

Operating Temperature

-40°C ~ 175°C (TJ)

Shipping

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$0.00
Shipping total
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
NXH015F120M3F1PTG
Brand Name
Original
Description
SILICON CARBIDE (SIC) MODULE ELI
Place of Origin
China
Package / Case
Module
Operating Temperature
-40°C ~ 175°C (TJ)
Series
-
Mfg Date Code
NEW
Power - Max
198W (Tj)
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 60A, 18V
Vgs(th) (Max) @ Id
4.4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs
211nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
4696pF @ 800V
Configuration
4 N-Channel (Full Bridge)
Mounting Type
Chassis Mount
Package
Bulk
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning