Memory EM008LXQBDH13ES1T 8 VDFN Exposed Pad Electronic Chips Component Original
Memory EM008LXQBDH13ES1T 8 VDFN Exposed Pad Electronic Chips Component OriginalNo reviews yet
Attributes
Component & PartType
8MbitMemory Size
ChinaPlace of Origin
TrayPackaging Type
MemoryApplication
Ic Integrated CircuitFeatures
Memory Type:Non-Volatile
Technology:MRAM (Magnetoresistive RAM)
Voltage - Supply:1.65V ~ 2V
Clock Frequency:133 MHz
Memory Organization:1M x 8
Write Cycle Time - Word, Page:-
Memory Interface:SPI - Quad I/O
Key attributes
Type
Component & Part
Memory Size
8Mbit
Place of Origin
China
Packaging Type
Tray
Application
Memory
Features
Ic Integrated Circuit
Memory Type
Non-Volatile
Technology
MRAM (Magnetoresistive RAM)
Voltage - Supply
1.65V ~ 2V
Clock Frequency
133 MHz
Memory Organization
1M x 8
Write Cycle Time - Word, Page
-
Memory Interface
SPI - Quad I/O
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
Easy Return
1 - 3,000 pieces
$1337
>= 3,001 pieces
$669
Variations
Select nowSpecification
EM008LXQBDH13ES1T
Shipping
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