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In Stock IPG16N10S4L61AATMA1 8-PowerVDFN Transistors Components Electronic

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$1.12
100-3,099 pieces
$0.56
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

IPG16N10S4L61AATMA1

Brand Name

Original

Description

MOSFET 2N-CH 100V 16A 8TDSON

Place of Origin

China

Package / Case

8-PowerVDFN

Operating Temperature

-55°C ~ 175°C (TJ)

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Item subtotal
$0.00
Shipping total
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
IPG16N10S4L61AATMA1
Brand Name
Original
Description
MOSFET 2N-CH 100V 16A 8TDSON
Place of Origin
China
Package / Case
8-PowerVDFN
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS
Mfg Date Code
NEW
Power - Max
29W
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
16A
Rds On (Max) @ Id, Vgs
61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
845pF @ 25V
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount, Wettable Flank
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning