Attributes
60T65PESModel Number
IGBT TransistorType
HENTETBrand Name
Throught HolePackage Type
TO-247 60A 600V IGBT TransistorDescription
Guangdong, ChinaPlace of Origin
Package / Case:TO-247
Operating Temperature:contact us
Series:Original standard
D/C:Standard
Application:Standard
Cross Reference:Standard
Media Available:Datasheet
Current - Collector (Ic) (Max):Standard
Voltage - Collector Emitter Breakdown (max):Standard
Vce Saturation (Max) @ Ib, Ic:Standard
Current - Collector Cutoff (Max):Standard
DC Current Gain (hFE) (Min) @ Ic, Vce:Standard
Power - Max:Standard
Frequency - Transition:Standard
Mounting Type:Through Hole
Resistor - Base (R1):Standard
Resistor - Emitter Base (R2):Standard
FET Type:Standard
FET Feature:Standard
Drain to Source Voltage (Vdss):Standard
Current - Continuous Drain (Id) @ 25°C:Standard
Rds On (Max) @ Id, Vgs:Standard
Vgs(th) (Max) @ Id:Standard
Gate Charge (Qg) (Max) @ Vgs:Standard
Input Capacitance (Ciss) (Max) @ Vds:Standard
Frequency:Standard
Current Rating (Amps):Standard
Noise Figure:Standard
Power - Output:Standard
Drive Voltage (Max Rds On, Min Rds On):Standard
Vgs (Max):Standard
IGBT Type:Standard
Configuration:Standard
Vce(on) (Max) @ Vge, Ic:Standard
Input Capacitance (Cies) @ Vce:Standard
Input:Standard
NTC Thermistor:Standard
Voltage - Breakdown (V(BR)GSS):Standard
Current - Drain (Idss) @ Vds (Vgs=0):Standard
Current Drain (Id) - Max:Standard
Voltage - Cutoff (VGS off) @ Id:Standard
Resistance - RDS(On):Standard
Voltage - Output:Standard
Voltage - Offset (Vt):Standard
Current - Valley (Iv):Standard
Transistor Type:N-Channel JFET
