FMV19N60E Single N-Channel Power MOSFET Transistor TO-3P Package 19N60E
Store rating:4.9
(35 reviews)
Attributes
MOSFET Type
General PurposeApplication
Throught HolePackage Type
Through HoleMounting Type
Schottky Diode (Isolated)FET Feature
SingleConfiguration
Manufacturer Part Number:19N60E
Brand Name:FUJ
Description:Power MOSFET N-Channel FMV19N60E Transistors
Place of Origin:TAIWAN
Package / Case:TO3P
Operating Temperature:-55-150C
Series:TRANSISTORS
Mfg Date Code:Standard
Supplier Type:Original Manufacturer
Cross Reference:Transistor
Media Available:Datasheet, Photo, EDA/CAD Models
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (max):- 30 V + 30 V
Vce Saturation (Max) @ Ib, Ic:STANDARD
Current - Collector Cutoff (Max):8A
Power - Max:225 W
Frequency - Transition:Enhancement
Resistor - Base (R1):Enhancement
Resistor - Emitter Base (R2):1.45 Ohms
FET Type:N-Channel
Drain to Source Voltage (Vdss):3V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:70 nC
Vgs(th) (Max) @ Id:Standard
Gate Charge (Qg) (Max) @ Vgs:Standard
Input Capacitance (Ciss) (Max) @ Vds:Standard
Frequency:Standard
Current Rating (Amps):Standard
Noise Figure:Standard
Power - Output:225w
Voltage - Rated:3v
Drive Voltage (Max Rds On, Min Rds On):Standard
Vgs (Max):Standard
IGBT Type:Mosfet
Vce(on) (Max) @ Vge, Ic:Standard
Input Capacitance (Cies) @ Vce:Standard
Input:Standard
NTC Thermistor:Standard
Voltage - Breakdown (V(BR)GSS):Standard
Current - Drain (Idss) @ Vds (Vgs=0):Standard
Current Drain (Id) - Max:Standard
Voltage - Cutoff (VGS off) @ Id:Standard
Resistance - RDS(On):Standard
Voltage - Output:Standard
Voltage - Offset (Vt):Standard
Current - Gate to Anode Leakage (Igao):Standard
Current - Valley (Iv):Standard
Current - Peak:Standard
Transistor Type:Mosfet
Key attributes
Type
MOSFET
Application
General Purpose
Package Type
Throught Hole
Mounting Type
Through Hole
FET Feature
Schottky Diode (Isolated)
Configuration
Single
Media Available
Datasheet, Photo, EDA/CAD Models
Supplier Type
Original Manufacturer
Power - Max
225 W
Package / Case
TO3P
Description
Power MOSFET N-Channel FMV19N60E Transistors
Manufacturer Part Number
19N60E
Brand Name
FUJ
Place of Origin
TAIWAN
Operating Temperature
-55-150C
Series
TRANSISTORS
Mfg Date Code
Standard
Cross Reference
Transistor
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (max)
- 30 V + 30 V
Vce Saturation (Max) @ Ib, Ic
STANDARD
Current - Collector Cutoff (Max)
8A
Frequency - Transition
Enhancement
Resistor - Base (R1)
Enhancement
Resistor - Emitter Base (R2)
1.45 Ohms
FET Type
N-Channel
Drain to Source Voltage (Vdss)
3V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
70 nC
Vgs(th) (Max) @ Id
Standard
Gate Charge (Qg) (Max) @ Vgs
Standard
Input Capacitance (Ciss) (Max) @ Vds
Standard
Frequency
Standard
Current Rating (Amps)
Standard
Noise Figure
Standard
Power - Output
225w
Voltage - Rated
3v
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vgs (Max)
Standard
IGBT Type
Mosfet
Vce(on) (Max) @ Vge, Ic
Standard
Input Capacitance (Cies) @ Vce
Standard
Input
Standard
NTC Thermistor
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current - Drain (Idss) @ Vds (Vgs=0)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Output
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Current - Peak
Standard
Transistor Type
Mosfet
Mounting Type
PCB
Packaging and delivery
Selling Units
Single item
Single package size
19X10X5 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
FREE shipping capped at $20
Lower priced than similar
5 - 49 pieces
$2
50 - 499 pieces
$160
>= 500 pieces
$125
*Taxes and import charges will be calculated at checkout
Quantity
Shipping
Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00
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