All categories
Featured selections
Trade Assurance
Buyer Central
Help Center
Get the app
Become a supplier

FB61N15D Silicon Carbide MOSFET Driver TO-220 150V 60A New Original Semiconductor BOM

No reviews yet

Attributes

FB61N15DModel Number
MOSFETType
OriginalBrand Name
Throught HolePackage Type
FB61N15DDescription
Taiwan, JapanPlace of Origin
Package / Case:TO-220
Operating Temperature:-55°C ~ 150°C (TJ)
Series:STripFE
D/C:2024
Application:MOSFET driver
Supplier Type:Original Manufacturer
Cross Reference:Transistor
Media Available:Datasheet
Voltage - Collector Emitter Breakdown (max):Original
Vce Saturation (Max) @ Ib, Ic:Original
DC Current Gain (hFE) (Min) @ Ic, Vce:Original
Power - Max:Original
Frequency - Transition:Original
Mounting Type:Through Hole
Resistor - Base (R1):Original
Resistor - Emitter Base (R2):Original
FET Type:N-Channel
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):Original
Current - Continuous Drain (Id) @ 25°C:Original
Rds On (Max) @ Id, Vgs:Original
Vgs(th) (Max) @ Id:Original
Gate Charge (Qg) (Max) @ Vgs:Original
Input Capacitance (Ciss) (Max) @ Vds:Original
Frequency:Original
Current Rating (Amps):Original
Noise Figure:Original
Power - Output:Original
Voltage - Rated:Original
Drive Voltage (Max Rds On, Min Rds On):Original
Vgs (Max):Original
IGBT Type:Original
Mounting Type:Original
Selling Units:Single item
Single package size:10X10X3 cm
Single gross weight:0.010 kg

Key attributes

Model Number
FB61N15D
Type
MOSFET
Brand Name
Original
Package Type
Throught Hole
Description
FB61N15D
Place of Origin
Taiwan, Japan
Package / Case
TO-220
Operating Temperature
-55°C ~ 150°C (TJ)
Series
STripFE
D/C
2024
Application
MOSFET driver
Supplier Type
Original Manufacturer
Cross Reference
Transistor
Media Available
Datasheet
Voltage - Collector Emitter Breakdown (max)
Original
Vce Saturation (Max) @ Ib, Ic
Original
DC Current Gain (hFE) (Min) @ Ic, Vce
Original
Power - Max
Original
Frequency - Transition
Original
Mounting Type
Through Hole
Resistor - Base (R1)
Original
Resistor - Emitter Base (R2)
Original
FET Type
N-Channel
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
Original
Current - Continuous Drain (Id) @ 25°C
Original
Rds On (Max) @ Id, Vgs
Original
Vgs(th) (Max) @ Id
Original
Gate Charge (Qg) (Max) @ Vgs
Original
Input Capacitance (Ciss) (Max) @ Vds
Original
Frequency
Original
Current Rating (Amps)
Original
Noise Figure
Original
Power - Output
Original
Voltage - Rated
Original
Drive Voltage (Max Rds On, Min Rds On)
Original
Vgs (Max)
Original
IGBT Type
Original
Mounting Type
Original

Packaging and delivery

Selling Units
Single item
Single package size
10X10X3 cm
Single gross weight
0.010 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
FREE shipping capped at $20 on your first order
Lower priced than similar
1 - 9 pieces
$2
10 - 99 pieces
$1.80
>= 100 pieces
$1.20

Quantity

Shipping

Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00

Alibaba.com order protection

Secure payments

Every payment you make on Alibaba.com is secured with strict SSL encryption and PCI DSS data protection protocols

Money-back protection

Claim a refund if your order doesn't ship, is missing, or arrives with product issues